IPB020NE7N3 G Infineon Technologies, IPB020NE7N3 G Datasheet

MOSFET N-CH 75V 120A TO263-3

IPB020NE7N3 G

Manufacturer Part Number
IPB020NE7N3 G
Description
MOSFET N-CH 75V 120A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB020NE7N3 G

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
3.8V @ 273µA
Gate Charge (qg) @ Vgs
206nC @ 10V
Input Capacitance (ciss) @ Vds
14400pF @ 37.5V
Power - Max
300W
Mounting Type
Surface Mount
Gate Charge Qg
206 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Forward Transconductance Gfs (max / Min)
196 S, 98 S
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
2.3 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB020NE7N3GXT

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