IPI80N04S2-H4 Infineon Technologies, IPI80N04S2-H4 Datasheet
IPI80N04S2-H4
Specifications of IPI80N04S2-H4
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IPI80N04S2-H4 Summary of contents
Page 1
... Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 Product Summary DS(on),max I D PG-TO263-3-2 Marking 2N04H4 2N04H4 2N04H4 ...
Page 2
... (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max 0 2.1 3 100 = 100 - 3.5 4.0 - 3.2 3.7 Unit K µA nA mΩ 2008-02-22 ...
Page 3
... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 200A at 25°C. For detailed thJC page 3 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max. - 4400 = 1800 - 480 - = 103 - 4 0 195 , S - 370 Unit - 148 - 320 1 2008-02-22 ...
Page 4
... V Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 100 µ 100 [V] DS page 4 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-02-22 ...
Page 5
... V GS Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter 5 [V] 8 Typ. Forward transconductance parameter: g 200 175 150 125 100 -55 ° [V] page 5 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ° 5 160 240 I [ 25° 100 I [ 320 150 2008-02-22 ...
Page 6
... GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- 1250 µA 250 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2008-02-22 ...
Page 7
... A 1000 80 A 500 [° Drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.1 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- pulsed 100 Q [nC] gate gate gate 2008-02- 120 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 page 8 IPB80N04S2-H4 2008-02-22 ...
Page 9
... Revision History Version Revision 1.1 Revision 1.1 Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 Date 22.02.2008 22.02.2008 page 9 IPB80N04S2-H4 Changes Update of side 1 and 10 according to new template Update of SOA diagram, labelling 2008-02-22 ...