IPI05CN10N G Infineon Technologies, IPI05CN10N G Datasheet
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IPI05CN10N G
Specifications of IPI05CN10N G
SP000680664
Related parts for IPI05CN10N G
IPI05CN10N G Summary of contents
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... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter v t IPB05CN10N G Product Summary Symbol Conditions IPI05CN10N G IPP05CN10N G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB05CN10N G IPI05CN10N G IPP05CN10N G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode IPB05CN10N G Symbol Conditions IPI05CN10N G IPP05CN10N G Values Unit min. typ. max. ...
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... Power dissipation P T 350 300 250 200 150 100 100 T [° Safe operating area [V] DS IPB05CN10N G 2 Drain current 120 100 150 200 0 4 Max. transient thermal impedance IPI05CN10N G IPP05CN10N G 50 100 150 200 T [° [ ...
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... Typ. output characteristics 400 320 240 160 [ Typ. transfer characteristics 300 250 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 200 160 120 IPB05CN10N G IPI05CN10N G IPP05CN10N 100 I [ 100 I [A] D 150 150 ...
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... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB05CN10N G IPI05CN10N G IPP05CN10N 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 115 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB05CN10N G IPI05CN10N G IPP05CN10N G 50 100 Q [nC] gate 150 g ate ...
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... PG-TO220-3: Outline IPB05CN10N G IPI05CN10N G IPP05CN10N G ...
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... PG-TO262-3-1 (I²PAK) IPB05CN10N G IPI05CN10N G IPP05CN10N G ...
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... PG-TO-263 (D²-Pak) IPB05CN10N G IPI05CN10N G IPP05CN10N G ...
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... IPB05CN10N G IPI05CN10N G IPP05CN10N G ...