IPW90R500C3 Infineon Technologies, IPW90R500C3 Datasheet - Page 7

• Manufacturer Part Number: IPW90R500C3
• Description: MOSFET N-CH 900V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R500C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.5V @ 740µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 100V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413756

Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
13 Typ. capacitances
C =f(V
10000
1000
100
10
DS
1
0
); V
GS
=0 V; f =1 MHz
100
200
Crss
Coss
Ciss
V
DS
300
[V]
400
500
600
page 7
14 Typ. C
E
oss
= f(V
8
6
4
2
0
0
DS
oss
)
stored energy
100
200
V
DS
300
[V]
400
IPW90R500C3
500
2008-07-29
600