IPP200N25N3 G Infineon Technologies, IPP200N25N3 G Datasheet - Page 4

• Manufacturer Part Number: IPP200N25N3 G
• Description: MOSFET N-CH 250V 64A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP200N25N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 122 S, 61 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP200N25N3GXK

Rev. 2.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
320
280
240
200
160
120
10
10
10
10
10
80
40
0
DS
-1
3
2
1
0
C
10
); T
0
)
-1
C
p
=25 °C; D =0
50
10
0
V
T
DS
C
100
10
[°C]
[V]
1
10 ms
DC
100 µs
1 ms
150
10
10 µs
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
70
60
50
40
30
20
10
C
0
-1
-2
0
); V
10
p
0
)
-5
0.02
0.01
0.05
0.2
GS
0.5
0.1
IPB200N25N3 G
single pulse
p
10
/T
-4
50
10
T
-3
C
t
100
p
[°C]
[s]
10
IPP200N25N3 G
-2
IPI200N25N3 G
150
10
-1
2010-10-19
200
10
0