SPW32N50C3 Infineon Technologies, SPW32N50C3 Datasheet - Page 8

• Manufacturer Part Number: SPW32N50C3
• Description: MOSFET N-CH 560V 32A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW32N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 3.9V @ 1.8mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 284W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 284000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014625; SPW32N50C3; SPW32N50C3IN; SPW32N50C3X; SPW32N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
13 Drain-source breakdown voltage
V
15 Typ. capacitances
C = f ( V
parameter: V
Rev. 2.5
(BR)DSS
pF
10
10
10
10
10
10
600
570
560
550
540
530
520
510
500
490
480
470
460
450
V
-60
5
4
3
2
1
0
0
SPW32N50C3
DS
= f ( T
)
-20
100
GS
j
)
Crss
=0V, f=1 MHz
20
200
Ciss
Coss
60
300
100
V
°C
T
V
j
DS
180
500
Page 8
14 Avalanche power losses
P
parameter: E
16 Typ. C
E
AR
oss
1000
µJ
W
600
400
200
= f ( V
= f ( f )
22
18
16
14
12
10
0
8
6
4
2
0
10
0
4
DS
oss
)
100
AR
stored energy
=1mJ
200
10
5
SPW32N50C3
300
2008-02-11
Hz
V
f
V
DS
500
10
6