IPW90R120C3 Infineon Technologies, IPW90R120C3 Datasheet - Page 6

MOSFET N-CH 900V 36A TO-247

IPW90R120C3

Manufacturer Part Number
IPW90R120C3
Description
MOSFET N-CH 900V 36A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R120C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3.5V @ 2.9mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW90R120C3XK
Q4173182
SP000413750

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R120C3
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
IPW90R120C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R120C3
0
Company:
Part Number:
IPW90R120C3
Quantity:
720
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
2000
1500
1000
=f(T
=f(Q
500
10
8
6
4
2
0
0
25
J
0
gate
); I
); I
D
=8.8A; V
DD
D
=26 A pulsed
50
100
DD
=50 V
75
Q
T
gate
J
400 V
[°C]
[nC]
100
720 V
200
125
300
150
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
1050
1000
950
900
850
800
10
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
J
J
); I
-20
D
=0.25 mA
150 °C
20
0.5
25 °C
T
V
J
SD
60
[°C]
[V]
100
1
IPW90R120C3
25 °C, 98%
140
150 °C, 98%
2008-07-30
180
1.5

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