IRF624S Vishay, IRF624S Datasheet - Page 3

• Manufacturer Part Number: IRF624S
• Description: MOSFET N-CH 250V 4.4A D2PAK
• Manufacturer: Vishay

Specifications of IRF624S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF624S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91030
S09-0071-Rev. A, 02-Feb-09
91030_01
91030_02
Fig. 2 - Typical Output Characteristics, T
10
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
-1
-1
1
0
10
1
0
10
Top
Bottom
-1
-1
Top
Bottom
V
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
91030_03
91030_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-1
1
0
- 60 - 40 - 20 0
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
150
= 4.4 A
= 10 V
V
°
5
C
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
IRF624S, SiHF624S
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3