NDS356P Fairchild Semiconductor, NDS356P Datasheet - Page 3

• Manufacturer Part Number: NDS356P
• Description: MOSFET P-CH 20V 1.1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS356P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356PTR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SM
Notes:
SD
P
design while R
Typical R
a. 250
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
o
C/W when mounted on a 0.02 in
R
T
b. 270
Scale 1 : 1 on letter size paper
JA
J
J A
1 a
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
A
t
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
CA
o
C/W when mounted on a 0.001 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
2
t
1b
pad of 2oz cpper.
R
DS ON
(T
2
pad of 2oz cpper.
A
= 25°C unless otherwise noted)
T
J
Conditions
V
GS
= 0 V, I
S
= -1.1 A
(Note 2)
Min
-0.85
Typ
Max
JC
-0.6
-1.2
-4
is guaranteed by
NDS356P Rev. E1
Units
A
A
V