NDS356P Fairchild Semiconductor, NDS356P Datasheet - Page 4

• Manufacturer Part Number: NDS356P
• Description: MOSFET P-CH 20V 1.1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS356P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356PTR

Typical Electrical Characteristics
-10
-5
-4
-3
-2
-1
0
1.3
1.2
1.1
0.9
0.8
-8
-6
-4
-2
0
0
1
-50
0
V
GS
V
V
Figure 1. On-Region Characteristics
DS
Figure 5. Transfer Characteristics
= -10V
I
D
GS
Figure 3. On-Resistance Variation
= -1.1 A
-25
= 1 0 V
-0.5
= -4.5 V
V
-2
GS
V
-6.0
0
DS
T , JUNCTION TEMPERATURE (°C)
J
, GATE TO SOURCE VOLTAGE (V)
with Temperature
, DRAIN-SOURCE VOLTAGE (V)
-1
-5.0
2 5
-1.5
T = -55°C
-4
J
5 0
-4.5
7 5
-2
-4.0
2 5
-3.5
-3.0
1 0 0
-6
1 2 5
-2.5
1 2 5
-8
1 5 0
-3
1.75
1.25
0.75
1.15
1.05
0.95
0.85
3.5
2.5
1.5
0.5
1.5
0.5
1.1
0.9
0.8
3
2
1
2
1
1
-50
0
0
with Drain Current and Gate Voltage
with Drain Current and Temperature
Figure 6. Gate Threshold Variation
V
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
GS
V
GS
-25
= -3.5 V
-1
= 4.5V
-1
0
with Temperature
T , JUNCTION TEMPERATURE (°C)
J
I
I , DRAIN CURRENT (A)
-2
D
D
25
T = 125°C
, DRAIN CURRENT (A)
J
-2
-4.0
50
-3
25°C
-3
-55°C
75
-4
I
V
100
-4.5
D
DS
= -250µA
-4
= V
-5.0
-6.0
-5
GS
125
-10
NDS356P Rev. E1
150
-5
-6