IRF840L Vishay, IRF840L Datasheet - Page 5

• Manufacturer Part Number: IRF840L
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840L

Document Number: 91069
S-83030-Rev. A, 19-Jan-09
91069_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
8.0
6.0
4.0
2.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
25
AS
91069_11
R
10 V
G
10
10
0.1
10
V
50
-3
-2
T
1
DS
10
C
, Case Temperature (°C)
0.02
D = 0.5
0.2
0.1
0.05
0.01
-5
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
10
0.01 Ω
100
L
-4
Single Pulse
(Thermal Response)
125
10
-3
150
+
-
V
t
1
, Rectangular Pulse Duration (S)
DD
10
-2
0.1
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
1
V
Notes:
1. Duty Factor, D = t
2. Peak T
IRF840L, SiHF840L
DS
t
r
t
p
j
= P
D.U.T.
P
10
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
+ T
2
t
f
V
+
-
10
C
www.vishay.com
DD
V
DD
2
5