IRF840L Vishay, IRF840L Datasheet - Page 7

• Manufacturer Part Number: IRF840L
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840L

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91069.
Document Number: 91069
S-83030-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
forward drop
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
IRF840L, SiHF840L
V
DD
Vishay Siliconix
www.vishay.com
7