IRF840LCS Vishay, IRF840LCS Datasheet - Page 6
![MOSFET N-CH 500V 8A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF840LCS
Manufacturer Part Number
IRF840LCS
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF840LCSPBF.pdf
(8 pages)
Specifications of IRF840LCS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF840LCS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840LCS
Manufacturer:
IR
Quantity:
12 500
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91068_12c
1200
1000
800
600
400
200
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
3.6 A
5.1 A
8.0 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0071-Rev. A, 02-Feb-09
Document Number: 91068
D.U.T.
I
D
+
-
V
DS