IRF9Z14STRL Vishay, IRF9Z14STRL Datasheet - Page 2

• Manufacturer Part Number: IRF9Z14STRL
• Description: MOSFET P-CH 60V 6.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z14STRL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z14, SiHF9Z14 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
S
g
rr
/T
J
T
V
V
MOSFET symbol
showing the
integral reverse
p - n junction diode
Between lead, and center of die contact
J
GS
GS
= 25 °C, I
V
R
T
DS
Reference to 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
G
= - 10 V
= - 10 V
= 25 °C, I
= 24 Ω, R
= - 48 V, V
V
V
V
V
V
DS
f = 1.0 MHz, see fig. 5
DD
DS
TYP.
GS
TEST CONDITIONS
DS
F
-
-
= - 25 V, I
= - 30 V, I
= V
= 0 V, I
= - 60 V, V
= - 6.7 A, dI/dt = 100 A/µs
V
V
V
GS
DS
S
I
GS
D
D
GS
= - 6.7 A, V
GS
= 4.0 Ω, see fig. 10
= - 6.7 A, V
, I
= ± 20 V
= - 25 V,
see fig. 6 and 13
= 0 V,
D
D
= 0 V, T
= - 250 µA
D
D
= - 250 µA
I
D
GS
= - 4.0 A
= - 6.7 A,
= - 4.0 A
D
= 0 V
= - 1 mA
J
GS
DS
G
= 150 °C
c
= 0 V
c
= - 48 V,
b
b, c
c
MAX.
b
b
D
S
3.5
40
b, c
MIN.
- 2.0
- 60
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0071-Rev. A, 02-Feb-09
Document Number: 91089
- 0.06
TYP.
270
170
7.5
31
11
63
10
31
80
96
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
- 4.0
- 6.7
- 5.5
S
- 27
160
190
0.5
3.8
5.1
12
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
nC
pF
ns
ns
V
V
Ω
S
A
V