IRF9Z14STRL Vishay, IRF9Z14STRL Datasheet
IRF9Z14STRL
Specifications of IRF9Z14STRL
Related parts for IRF9Z14STRL
IRF9Z14STRL Summary of contents
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... D connection resistance and can dissipate typical surface mount application. P-Channel MOSFET The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications PAK (TO-263) IRF9Z14STRLPbF SiHF9Z14STL-E3 IRF9Z14STRL SiHF9Z14STL = 25 °C, unless otherwise noted ° 100 °C ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Pulse Width - Drain-to-Source Voltage ( 91089_02 Fig Typical Output Characteristics Document Number: 91089 S09-0071-Rev. A, 02-Feb-09 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L - 4 ° 91089_03 - 4 175 ° 91089_04 Vishay Siliconix 1 10 ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 6.7 A ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix 600 MHz iss rss gd 480 oss ds 360 240 120 Drain-to-Source Voltage ( 91089_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 Total Gate Charge (nC) 91089_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91089_07 For test circuit ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91089 S09-0071-Rev. A, 02-Feb-09 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 500 Top 400 Bottom 300 200 100 125 100 Starting T , Junction Temperature (°C) 91089_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 2 4 6.7 A 150 175 Current regulator Same type as D.U.T. 50 kΩ ...
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... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91089. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...