IRFBF30S Vishay, IRFBF30S Datasheet
IRFBF30S
Specifications of IRFBF30S
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IRFBF30S Summary of contents
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... PAK (TO-263) SiHFBF30S-GE3 IRFBF30SPbF SiHFBF30S-E3 IRFBF30S SiHFBF30S = 25 °C, unless otherwise noted ° 100 ° °C C for 3.6 A (see fig. 12 150 °C. J IRFBF30S, SiHFBF30S Vishay Siliconix device design, low on-resistance 2 PAK (TO-263) contribute to SYMBOL LIMIT V 900 DS V ± 3 2 1.0 E 250 ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 IRFBF30S, SiHFBF30S = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 ...
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... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 IRFBF30S, SiHFBF30S Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + V DD ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91389 ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFBF30S, SiHFBF30S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...