IRFBF30S Vishay, IRFBF30S Datasheet - Page 5

MOSFET N-CH 900V 3.6A D2PAK

IRFBF30S

Manufacturer Part Number
IRFBF30S
Description
MOSFET N-CH 900V 3.6A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFBF30S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBF30S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBF30STRLPBF
Quantity:
5 950
Document Number: 91389
S10-2433-Rev. B, 25-Oct-10
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
AS
R
10 V
g
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
A
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
IRFBF30S, SiHFBF30S
10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5

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