IRFBF30STRR Vishay, IRFBF30STRR Datasheet
IRFBF30STRR
Specifications of IRFBF30STRR
Related parts for IRFBF30STRR
IRFBF30STRR Summary of contents
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... Ease of Paralleling 42 • Simple Drive Requirements Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized G cost-effectiveness. 2 The D PAK (TO-263) package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 IRFBF30S, SiHFBF30S = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91389 S10-2433-Rev. B, 25-Oct-10 IRFBF30S, SiHFBF30S Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(on) r d(off www.vishay.com 5 ...
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... IRFBF30S, SiHFBF30S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91389 ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91389. Document Number: 91389 S10-2433-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...