IRFBF30STRR Vishay, IRFBF30STRR Datasheet - Page 2

• Manufacturer Part Number: IRFBF30STRR
• Description: MOSFET N-CH 900V 3.6A D2PAK
• Manufacturer: Vishay

Specifications of IRFBF30STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFBF30S, SiHFBF30S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
a
SYMBOL
V
R
V
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
SYMBOL
R
R
R
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
thJC
thJA
thJA
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 12 , R
= 720 V, V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
DS
TEST CONDITIONS
DD
DS
DS
GS
= 100 V, I
= 450 V, I
F
= 900 V, V
= V
= 0 V, I
V
= 3.6 A, dI/dt = 100 A/μs
V
V
GS
D
DS
S
GS
GS
I
GS
= 120 , see fig. 10
D
= 3.6 A, V
= ± 20 V
= 25 V,
, I
= 3.6 A, V
TYP.
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
-
-
-
D
= 250 μA
D
= 250 μA
I
GS
D
= 2.2 A
= 3.6 A,
= 2.2 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
G
= 0 V
b
= 360 V,
b
b
D
S
b
D
S
b
b
MAX.
1.0
62
40
MIN.
900
2.0
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2433-Rev. B, 25-Oct-10
Document Number: 91389
TYP.
1200
320
200
430
1.1
4.5
7.5
1.4
14
25
90
30
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
100
500
650
4.0
3.7
3.6
1.8
2.1
S
78
10
42
14
UNIT
°C/W
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V