FDS2170N7 Fairchild Semiconductor, FDS2170N7 Datasheet - Page 4

• Manufacturer Part Number: FDS2170N7
• Description: MOSFET N-CH 200V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS2170N7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 128 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1292pF @ 100V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2170N7TR; FDS2170N7_NL; FDS2170N7_NLTR; FDS2170N7_NLTR

Typical Characteristics
30
25
20
15
10
60
50
40
30
20
10
5
0
0
2.6
2.2
1.8
1.4
0.6
0.2
0
Figure 3. On-Resistance Variation with
3
1
Figure 1. On-Region Characteristics.
-50
V
Figure 5. Transfer Characteristics.
DS
= 20V
V
I
D
V
GS
2
= 3.0A
GS
-25
= 10V
= 10V
4
V
V
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
4
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
6.5V
25
5
7.0V
6
50
8
6
T
75
A
= -55
10
100
o
o
C)
C
6.0V
7
125
12
125
o
C
25
o
C
150
14
8
Figure 6. Body Diode Forward Voltage Variation
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.0001
0.001
0.01
1.6
1.4
1.2
0.8
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
4
10
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= 5.5V
5
Gate-to-Source Voltage.
T
0.2
A
V
= 25
V
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
5
o
C
T
A
6
= 125
I
0.4
D
, DRAIN CURRENT (A)
6.0V
o
T
C
A
= 125
7
10
0.6
25
o
6.5V
C
o
C
8
0.8
-55
15
o
C
FDS2170N7 Rev D (W)
I
D
10V
= 1.5 A
9
1
20
10
1.2