FDD2612 Fairchild Semiconductor, FDD2612 Datasheet
FDD2612
Specifications of FDD2612
Related parts for FDD2612
FDD2612 Summary of contents
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... Low gate charge (8nC typical =25 C unless otherwise noted A (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) (Note 1b) Reel Size 13’’ August 2001 R = 720 DS(ON Ratings Units 200 4 3.8 1 +175 C 3.5 C/W 40 C/W 96 C/W Tape width Quantity 16mm 2500 units FDD2612 Rev B1 (W) ...
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... V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units = 1. 1.5 A 200 V 246 mV 100 nA –100 4.5 V – 8.6 mV/ C 600 720 m 1125 1422 5 A 4.4 S 234 1.6 nC 2.2 nC 3.2 A 0.8 1 96°C/W when mounted minimum pad. FDD2612 Rev B1(W) ...
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... C 0.0001 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 5.5V GS 6.0V 6.5V 7.5V 10V DRAIN CURRENT ( 0. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD2612 Rev B1( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS 40 80 120 160 200 V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =96°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD2612 Rev B1(W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...