FDD2612 Fairchild Semiconductor, FDD2612 Datasheet - Page 2

• Manufacturer Part Number: FDD2612
• Description: MOSFET N-CH 200V 4.9A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 234pF @ 100V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.72 Ohms
• Forward Transconductance Gfs (max / Min): 4.4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Electrical Characteristics
Drain-Source Avalanche Ratings
W
I
Off Characteristics
On Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
Symbol
BV
I
I
I
V
R
I
g
I
V
the drain pins. R
f
AR
d(on)
r
d(off)
DSS
GSSF
GSSR
D(on)
S
where P
FS
BV
V
iss
oss
rss
GS(th)
g
gs
gd
SD
DS(on)
JA
DSS
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
D
is maximum power dissipation at T
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current
Forward Transconductance
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
R
DS
P
D
(
ON
C
)
a) R
Scale 1 : 1 on letter size paper
= 25°C and R
(Note 2)
1in
JA
CA
2
pad of 2 oz copper
= 40°C/W when mounted on a
is determined by the user's board design.
(Note 2)
DS(on)
Single Pulse,V
V
I
V
V
V
V
I
V
V
V
V
V
D
D
is at T
V
f = 1.0 MHz
V
V
V
V
T
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
A
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
DS
DD
GS
DS
GS
= 25°C unless otherwise noted
= 0 V,
= 160 V,
= 20 V,
= –20 V ,
= V
= 10 V,
= 10 V, I
= 10 V,
= 10 V,
= 0 V,
= 100 V,
= 100 V,
= 100 V,
= 10 V,
= 10 V
J(max)
Test Conditions
GS
and V
,
I
D
S
GS
DD
= 1.5 A,T
= 3.2 A
= 10V. Package current limitation is 21A
I
V
V
V
I
I
V
V
I
I
D
D
D
I
R
D
= 100 V,I
D
D
GS
DS
DS
DS
GS
GEN
= 250 A
= 250 A
= 1.5 A
= 1.5 A,
= 1.5 A
= 1 A,
= 0 V
= 0 V
= 0 V
= 10 V
= 0 V,
= 6
J
= 125 C
(Note 2)
D
= 1.5A
Min
b) R
200
2
5
on a minimum pad.
JA
= 96°C/W when mounted
Typ Max Units
– 8.6
1125
246
600
4.4
234
0.8
1.6
2.2
18
17
4
8
6
6
8
8
–100
1422
100
720
4.5
3.2
1.2
1.5
90
12
12
30
16
11
1
FDD2612 Rev B1(W)
mV/ C
mV/ C
m
mJ
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A
A