FDH50N50 Fairchild Semiconductor, FDH50N50 Datasheet

MOSFET N-CH 500V 48A TO-247

FDH50N50

Manufacturer Part Number
FDH50N50
Description
MOSFET N-CH 500V 48A TO-247
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDH50N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
105 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
137nC @ 10V
Input Capacitance (ciss) @ Vds
6460pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDH50N50
Manufacturer:
IXYS
Quantity:
2 000
Part Number:
FDH50N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
FDH50N50 / FDA50N50 Rev. A
FDH50N50 / FDA50N50
500V N-Channel MOSFET
Features
• 48A, 500V, R
• Low gate charge ( typical 105 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
JC
CS
JA
T
STG
rss
( typical 45 pF)
G
DS(on)
D
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.105 @V
TO-247
FDH Series
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25 C
= 10 V
Parameter
Parameter
C
= 25 C)
C
C
= 25 C)
= 100 C)
G
D
S
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TO-3P
FDA Series
FDH50N50/FDA50N50
Min.
0.24
--
--
-55 to +150
1868
30.8
62.5
500
192
625
300
4.5
48
48
20
5
G
UniFET
Max.
!
!
0.2
40
--
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
www.fairchildsemi.com
Unit
W/ C
V/ns
Unit
mJ
mJ
W
V
A
A
A
V
A
C/W
C/W
C/W
C
C
TM

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FDH50N50 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink CS R Thermal Resistance, Junction-to-Ambient JA ©2004 Fairchild Semiconductor Corporation FDH50N50 / FDA50N50 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 1.46mH 48A 50V Starting 48A, di/dt 200A Starting DSS 4. Pulse Test: Pulse width 300 s, Duty Cycle 5. Essentially Independent of Operating Temperature Typical Characteristics FDH50N50 / FDA50N50 Rev. A Package Reel Size TO-247 - TO- 25°C unless otherwise noted C Conditions 250 250 A, Referenced ...

Page 3

... V GS 0.2 0.1 0 Drain Current [A] D Figure 5. Capacitance Characteristics 12,000 10,000 8,000 6,000 4,000 2,000 C rss Drain-Source Voltage [V] DS FDH50N50 / FDA50N50 Rev. A Figure 2. Transfer Characteristics 100 10 1 Notes : 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 160 120 = 10V 20V Note : ...

Page 4

... Figure 11. Typical Drain Current Slope vs. Gate Resistance 4,000 3,500 3,000 2,500 di/dt(on) 2,000 1,500 di/dt(off) 1,000 500 Gate resistance [ ] G FDH50N50 / FDA50N50 Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 Notes : 0 250 A D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current ...

Page 5

... Typical Performance Characteristics Figure 13. Typical Switching Losses vs. Gate Resistance 1,000 800 600 400 200 Gate resistance [ ] G Figure 15. Transient Thermal Resistance Curve FDH50N50 / FDA50N50 Rev. A (Continued) Figure 14. Unclamped Inductive Switching 100 Eoff 10 Eon Notes : 400 25A 125 0.01 D=0.5 -1 0.2 Notes : 1. Z 0.1 2 ...

Page 6

... Mechanical Dimensions TO-247AD (FKS PKG CODE 001) FDH50N50 / FDA50N50 Rev. A Dimensions in Millimeters 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 FDH50N50 / FDA50N50 Rev. A (Continued) TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 7 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDH50N50 / FDA50N50 Rev. A ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ PowerTrench MicroPak™ ...

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