FDH50N50 Fairchild Semiconductor, FDH50N50 Datasheet - Page 4

• Manufacturer Part Number: FDH50N50
• Description: MOSFET N-CH 500V 48A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6460pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH50N50 / FDA50N50 Rev. A
Typical Performance Characteristics
4,000
3,500
3,000
2,500
2,000
1,500
1,000
Figure 9. Maximum Safe Operating Area
10
10
10
10
10
Figure 7. Breakdown Voltage Variation
500
Figure 11. Typical Drain Current Slope
1.2
1.1
1.0
0.9
0.8
-1
3
2
1
0
10
0
-100
0
0
Notes :
1. T
2. T
3. Single Pulse
C
J
di/dt(off)
5
= 150
= 25
-50
o
C
o
C
vs. Gate Resistance
10
vs. Temperature
di/dt(on)
V
T
DS
J
15
, Junction Temperature [
10
, Drain-Source Voltage [V]
R
0
1
G
Operation in This Area
is Limited by R
, Gate resistance [ ]
20
50
25
DS(on)
DC
30
10 ms
100
10
2
o
35
C]
1 ms
Notes :
1. V
2. I
D
100 us
40
GS
= 250 A
150
= 0 V
Notes :
1. V
2. V
3. I
4. T
10 us
D
DS
GS
J
= 25A
45
= 125
= 400 V
= 12 V
o
(Continued)
C
200
10
50
3
4
Figure 12. Typical Drain-Source Voltage
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
45
40
35
30
25
20
15
10
0
5
0
25
-100
0
dv/dt(off)
Slope vs. Gate Resistance
5
vs. Case Temperature
-50
50
10
vs. Temperature
dv/dt(on)
T
T
15
J
, Junction Temperature [
C
R
, Case Temperature [
0
G
, Gate resistance [ ]
75
20
25
50
100
30
100
o
C]
35
o
C]
www.fairchildsemi.com
125
40
Notes :
1. V
2. I
150
Notes :
1. V
2. V
3. I
4. T
D
GS
= 24 A
D
= 10 V
DS
GS
J
= 25A
45
= 125
= 400 V
= 12 V
o
C !
150
200
50