FDS6675A Fairchild Semiconductor, FDS6675A Datasheet
FDS6675A
Manufacturer Part Number
FDS6675A
Description
MOSFET P-CH 30V 11A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6675A.pdf
(5 pages)
Specifications of FDS6675A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
2330pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6675A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6675A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6675A
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
FDS6675A
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
FDS6675A
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–11 A, –30 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–30
–11
–50
125
2.5
1.2
50
25
25
1
= 13 m @ V
= 19 m @ V
February 2003
4
3
2
1
FDS6675A Rev C (W)
GS
GS
2500 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6675A Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ February 2003 –10 V DS(ON –4.5 V DS(ON Ratings Units – –11 A –50 2.5 W 1.2 1 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6675A Rev C (W) ...
Page 2
... CA b) 105°C/W when 2 mounted on a .04 in pad copper Min Typ Max Units –30 V –23 mV/ C –10 A ±100 nA –1 –1.6 – mV – 2330 pF 610 pF 300 110 –2.1 A –0.7 –1 125°C/W when mounted on a minimum pad. FDS6675A Rev C (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3.5V GS -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( -5. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6675A Rev C ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz Ciss Coss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS6675A Rev C (W) ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...