FDS6675A Fairchild Semiconductor, FDS6675A Datasheet - Page 4

• Manufacturer Part Number: FDS6675A
• Description: MOSFET P-CH 30V 11A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6675A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
5
4
3
2
1
0
10
1
Figure 9. Maximum Safe Operating Area.
0
0.1
Figure 7. Gate Charge Characteristics.
I
R
D
SINGLE PULSE
R
DS(ON)
= -11A
0.001
0.01
V
JA
T
0.1
GS
A
= 125
0.0001
1
5
= 25
LIMIT
= -10V
o
o
D = 0.5
C
C/W
-V
0.2
DS
0.05
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.02
10
Q
1
0.01
g
, GATE CHARGE (nC)
SINGLE PULSE
0.001
DC
V
15
10s
DS
1s
= -10V
Figure 11. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
20
10
1ms
-20V
0.01
100
25
-15V
100
30
0.1
t
1
, TIME (sec)
3500
3000
2500
2000
1500
1000
500
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
1
0
Figure 10. Single Pulse Maximum
Crss
0.01
5
Coss
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
t
Ciss
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
15
1
R
J
R
- T
JA
JA
100
(t) = r(t) * R
A
= 125
t
1
= P * R
t
2
20
10
o
C/W
JA
SINGLE PULSE
1
R
JA
(t)
/ t
JA
T
2
A
FDS6675A Rev C (W)
25
= 125°C/W
100
1000
= 25°C
f = 1 MHz
V
GS
= 0 V
1000
30