IRFNL210BTA_FP001 Fairchild Semiconductor, IRFNL210BTA_FP001 Datasheet - Page 3

• Manufacturer Part Number: IRFNL210BTA_FP001
• Description: MOSFET N-CH 200V 1A TO-92L
• Manufacturer: Fairchild Semiconductor

Specifications of IRFNL210BTA_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
500
400
300
200
100
10
10
10
8
6
4
2
0
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
C
C
C
rss
iss
oss
V
4
GS
V
= 20V
GS
= 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
6
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
= 25 ℃
ds
= shorted)
= 0 V
8
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
Variation with Source Current
150
0.4
o
C
o
C
4
150℃
2
0.6
V
V
and Temperature
Q
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25℃
DS
-55
0.8
V
= 160V
DS
o
C
V
= 100V
DS
6
4
= 40V
1.0
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
6
DS
GS
= 40V
= 0V
D
1.4
= 3.3 A
Rev. A, December 2002
10
1.6
8