IRFNL210B Fairchild Semiconductor, IRFNL210B Datasheet
IRFNL210B
Related parts for IRFNL210B
IRFNL210B Summary of contents
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... C - Derate above 25°C Parameter = 1 DS(on " " ! " ! " " " " " IRFNL210B Units 200 V 1 3.3 A 0.031 mJ 5.0 V/ns 3.1 W 0.025 W/°C -55 to +150 °C 300 °C Typ Max Units ...
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... Repetitive Rating : Pulse width limited by maximum junction temperature 5.5mH 3.3A 50V ≤ 3.3A, di/dt ≤ 300A Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Parameter Test Conditions 250 A, Referenced to 25° ...
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... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 500 400 300 200 100 Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Drain-Source Voltage [ 10V 20V GS ※ ...
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... Figure 7. Breakdown Voltage Variation Operation in This Area is Limited Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) ※ Notes : 250 μ 100 150 200 o , Junction Temperature [ C] DS(on) 100 s ...
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... 10V 10V 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...
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... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT ...
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... Package Dimensions 0.50 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 0.10 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A, December 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST CoolFET™ FASTr™ ...