FQD7N10LTF Fairchild Semiconductor, FQD7N10LTF Datasheet

MOSFET N-CH 100V 5.8A DPAK

FQD7N10LTF

Manufacturer Part Number
FQD7N10LTF
Description
MOSFET N-CH 100V 5.8A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQD7N10LTF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor International
FQD7N10L / FQU7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
resistance,
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
switching
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.8A, 100V, R
• RoHS Compliant
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirments allowing
FQU Series
direct operation from logic drives
I-PAK
FQD7N10L / FQU7N10L
DS(on)
Typ
--
--
--
-55 to +150
= 0.35
3.67
23.2
300
100
5.8
5.8
2.5
6.0
2.5
0.2
50
25
20
G
@V
!
!
Max
110
5.0
50
GS
October 2008
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A3, October 2008
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD7N10LTF

FQD7N10LTF Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Features • 5.8A, 100V, R • Low gate charge ( typical 4.6 nC) • Low Crss ( typical 12 pF) • Fast switching superior switching • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2.23mH 5.8A 25V 7.3A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 125° ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 600 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 1 10 150℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 150℃ ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 6 5 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor International D - PAK Dimensions in Millimeters Rev. A3,October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A3, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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