FQD7N10LTF Fairchild Semiconductor, FQD7N10LTF Datasheet - Page 8

• Manufacturer Part Number: FQD7N10LTF
• Description: MOSFET N-CH 100V 5.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD7N10LTF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 290pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor International
Rev. A3, October 2008