FQP11P06 Fairchild Semiconductor, FQP11P06 Datasheet - Page 3

• Manufacturer Part Number: FQP11P06
• Description: MOSFET P-CH 60V 11.4A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
800
600
400
200
10
10
0.8
0.6
0.4
0.2
0.0
-1
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
10
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
, Drain Current [A]
0
10
20
C
C
C
0
oss
iss
rss
V
V
GS
GS
= - 20V
= - 10V
30
C
C
C
iss
oss
rss
※
= C
= C
= C
10
1. 250µ s Pulse Test
2. T
※
Notes :
gs
gd
ds
1
Note : T
C
+ C
+ C
= 25 ℃
40
10
gd
gd
1
(C
※
J
ds
1. V
2. f = 1 MHz
= 25 ℃
Notes :
= shorted)
GS
= 0 V
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25 ℃
Figure 2. Transfer Characteristics
0.2
175 ℃
2
Variation vs. Source Current
175 ℃
0.4
4
-V
-V
4
0.6
Q
GS
SD
and Temperature
-55 ℃
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
25 ℃
V
DS
0.8
V
= -48V
DS
6
= -30V
1.0
6
8
1.2
1.4
※
10
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
※
Notes :
8
DS
GS
Note : I
= -30V
1.6
= 0V
D
12
= -11.4 A
1.8
Rev. B4, March 2004
2.0
10
14