FQP11P06 Fairchild Semiconductor, FQP11P06 Datasheet - Page 4

• Manufacturer Part Number: FQP11P06
• Description: MOSFET P-CH 60V 11.4A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
Notes :
-1
-2
1 0
0
C
J
= 175
= 25
-5
o
D = 0 .5
0 .0 2
0 .0 5
0 . 0 1
DS(on)
C
o
0 .2
10
0 .1
C
50
1
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
s in g le p u ls e
(Continued)
o
-4
1 ms
C]
※
1. V
2. I
t
Notes :
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
100 s
GS
= -250 µA
150
= 0 V
1 0
-3
200
10
2
1 0
-2
2.5
2.0
1.5
1.0
0.5
0.0
12
10
-100
8
6
4
2
0
25
※
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
N o te s :
-1
P
-50
θ J C
J M
DM
50
- T
( t) = 2 .8 5
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
75
0
t
, Case Temperature [ ]
1 0
2
℃
* Z
0
/ W M a x .
1
/t
θ J C
2
( t)
100
50
1 0
1
100
125
℃
o
C]
※
1. V
2. I
Notes :
150
150
D
GS
= -5.7 A
= -10 V
Rev.B4, March 2004
200
175