RFD3055 Fairchild Semiconductor, RFD3055 Datasheet - Page 5

• Manufacturer Part Number: RFD3055
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD3055

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 20V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuits and Waveforms
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VARY t
REQUIRED PEAK I
0V
V
GS
600
400
200
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
0
P
0
FIGURE 16. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
V
t
GS
P
V
AS
5
DS
, DRAIN TO SOURCE VOLTAGE (V)
R
G
10
R
G
C
C
C
ISS
OSS
RSS
15
R
L
V
C
C
C
V
I
Unless Otherwise Specified (Continued)
AS
GS
DS
ISS
RSS
OSS
DUT
= 0V, f = 1MHz
DUT
= C
0.01Ω
= C
≈ C
20
L
GS
GD
DS
+ C
+ C
+
-
GD
+
-
V
GD
V
DD
DD
25
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
0
0
0
V
V
GS
DS
60
45
30
15
10%
0
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
20
V
t
d(ON)
DD
90%
I
I
CONSTANT GATE CURRENT
G(REF)
G(ACT)
50%
t
= BV
ON
10%
DSS
t
r
I
0.75 BV
0.50 BV
0.25 BV
AS
R
I
V
PULSE WIDTH
G(REF)
GS
L
t, TIME (µs)
t
= 5Ω
P
= 10V
DSS
DSS
DSS
= 0.24mA
0.75 BV
0.50 BV
0.25 BV
RFD3055, RFD3055SM, RFP3055 Rev. B
BV
t
AV
DSS
V
DSS
DSS
DSS
DD
80
= BV
t
d(OFF)
I
I
90%
G(REF)
G(ACT)
V
t
DSS
OFF
DS
50%
t
f
10%
V
10
7.5
5.0
2.5
0
90%
DD