RFD3055 Fairchild Semiconductor, RFD3055 Datasheet - Page 7

• Manufacturer Part Number: RFD3055
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD3055

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 20V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT RFP3055 2 1 3 ;
CA 12 8 0.540e-9
CB 15 14 0.540e-9
CIN 6 8 0.300e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 67.9
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.61e-9
LSOURCE 3 7 4.61e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 1e-4
RGATE 9 20 7.23
RIN 6 8 1e9
RSCL1 5 51 RSLVCMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 108e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.5
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/30,6.5))}
.MODEL DBDMOD D (IS=4.33e-14 RS=2.78e-2 TRS1=1.10e-3 TRS2=5.19e-6 CJO=3.94e-10 TT=7.63e-8)
.MODEL DBKMOD D (RS=0.676 TRS1=1.94e-3 TRS2=-1.09e-6)
.MODEL DPLCAPMOD D (CJO=0.238e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=4.078 KP=12 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.06e-3 TC2=-1.92e-6)
.MODEL RDSMOD RES (TC1=5.03e-3 TC2=1.53e-5)
.MODEL RSLVCMOD RES (TC1=2.2e-3 TC2=-5e-6)
.MODEL RVTOMOD RES (TC1=-5.02e-3 TC2=-9.16e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.5 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-6.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.50 VOFF=2.50)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.50 VOFF=-2.50)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFet Featuring Global Temperature
Options; authored by William J. Hepp and C. Frank Wheatley.
GATE
rev 10/26/93
1
LGATE
RGATE
9
12
+
S1A
S1B
EVTO
CA
ESG
18
8
EGS
13
8
10
+
13
6
8
R
+
IN
14
13
6
8
RSCL2
S2A
DPLCAP
S2B
VTO
15
EDS
CB
C
6
+
IN
16
+
5
8
51
5
5
14
+
MOS1
50
RDRAIN
51
RSCL1
ESCL
21
8
DBREAK
RSOURCE
EBREAK
MOS2
11
17
18
17
+
RBREAK
7
IT
RFD3055, RFD3055SM, RFP3055 Rev. B
LDRAIN
LSOURCE
DBODY
18
19
+
RVTO
VBAT
DRAIN
SOURCE
2
3