FQB9N25CTM Fairchild Semiconductor, FQB9N25CTM Datasheet - Page 3

• Manufacturer Part Number: FQB9N25CTM
• Description: MOSFET N-CH 250V 8.8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N25CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1500
1000
500
10
10
10
1.25
1.00
0.75
0.50
0.25
0.00
0
10
-1
1
0
10
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs
-1
0
Top :
Bottom : 4.5 V
※
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
= 0 V
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
10
I
D
0
0
, Drain Current [A]
V
GS
C
C
C
oss
rss
iss
= 10V
※
C
C
C
1. 250µ s Pulse Test
2. T
20
iss
oss
rss
Notes :
= C
= C
= C
C
10
10
= 25 ℃
gs
gd
ds
V
1
1
※
+ C
+ C
GS
Note : T
gd
= 20V
gd
(C
ds
= shorted)
J
= 25 ℃
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
o
Variation with Source Current
C
0.4
5
o
C
4
150 ℃
V
V
Q
GS
SD
and Temperature
G
0.6
10
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55
V
DS
o
C
V
= 200V
25 ℃
DS
V
= 125V
0.8
15
6
DS
= 50V
1.0
20
※
1. V
2. 250µ s Pulse Test
※
Notes :
1. V
2. 250µ s Pulse Test
Notes :
※
DS
8
= 40V
GS
Note : I
= 0V
1.2
25
D
= 8.8A
Rev. A, March 2004
10
1.4
30