FQB9N25CTM Fairchild Semiconductor, FQB9N25CTM Datasheet - Page 4

• Manufacturer Part Number: FQB9N25CTM
• Description: MOSFET N-CH 250V 8.8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N25CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area
-1
2
1
0
-100
10
Figure 7. Breakdown Voltage Variation
0
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
C
Operation in This Area
is Limited by R
V
T
vs Temperature
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
10
1
-1
-2
1 0
0
DS(on)
-5
0 .0 2
D = 0 .5
0 .0 5
0 .0 1
0 .1
0 .2
50
DC
Figure 11. Transient Thermal Response Curve
10 ms
(Continued)
100
1 0
1 ms
-4
o
s in g le p u ls e
C]
10
※
t
1. V
2. I
100
2
1
Notes :
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 µA
µ
150
= 0 V
s
1 0
-3
200
1 0
-2
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
25
-100
※
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 8. On-Resistance Variation
N o te s :
-1
P
θ
J M
DM
J C
( t) = 1 .6 9
-50
- T
50
C
vs Case Temperature
= P
t
T
1
T
D M
J
t
vs Temperature
, Junction Temperature [
C
2
1 0
℃
, Case Temperature [ ]
* Z
0
/W M a x .
0
1
/t
θ
75
J C
2
( t)
50
1 0
100
1
100
℃
o
C]
125
※
1. V
2. I
Notes :
150
D
GS
= 4.4 A
= 10 V
Rev. A, March 2004
200
150