RFP22N10 Fairchild Semiconductor, RFP22N10 Datasheet
RFP22N10
Specifications of RFP22N10
Available stocks
Related parts for RFP22N10
RFP22N10 Summary of contents
Page 1
... High Input Impedance o • 175 C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount BRAND Components to PC Boards” RFP22N10 Symbol F1S22N10 SOURCE DRAIN GATE File Number = 0.080 Ω JEDEC TO-263AB DRAIN GATE (FLANGE) SOURCE RFP22N10, RF1S22N10SM Rev. B 2385.3 ...
Page 2
... T -55 to 175 J STG 300 L 260 pkg MIN TYP 100 - 150 ≈ 22A 80V 3.64 Ω 1mA g(REF) (Figure 11 MIN TYP - - - - RFP22N10, RF1S22N10SM Rev. B UNITS MAX UNITS - µ µ ± 100 nA Ω 0.080 120 ns 150 3 1.5 C C/W MAX UNITS 1.5 V 200 ns ...
Page 3
... CASE TEMPERATURE STARTING T o STARTING T = 150 (L)(I )/(1.3 RATED DSS ≠ (L/R)ln[(I R)/(1.3 RATED DSS 1 0.01 0 TIME IN AVALANCHE (ms PULSE DURATION = 80µ 15V DS DUTY CYCLE = 0.5% MAX - GATE TO SOURCE VOLTAGE (V) GS FIGURE 6. TRANSER CHARACTERISTICS RFP22N10, RF1S22N10SM Rev. B 150 175 20V 175 ...
Page 4
... D GS PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0 100 T , JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 500 C RSS DRAIN TO SOURCE VOLTAGE ( 7 DSS 5 2 G(REF G(ACT) RFP22N10, RF1S22N10SM Rev. B 150 200 0V 1MHz ISS RSS GD ≈ OSS ISS C OSS 20 25 ...
Page 5
... FIGURE 16. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT 0.01Ω DUT DUT DSS FIGURE 13. UNCLAMPED ENERGY WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 15. RESISTIVE SWITCHING WAVEFORMS Q g(TOT G(REF) FIGURE 17. GATE CHARGE WAVEFORMS RFP22N10, RF1S22N10SM Rev OFF d(OFF 90% 10% 90% 50 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...