HUF75343G3 Fairchild Semiconductor, HUF75343G3 Datasheet

MOSFET N-CH 55V 75A TO-247

HUF75343G3

Manufacturer Part Number
HUF75343G3
Description
MOSFET N-CH 55V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75343G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
205nC @ 20V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
270W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75343G3
Manufacturer:
TOSHIBA
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA75343.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75343G3
HUF75343P3
HUF75343S3
HUF75343S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
SOURCE
GATE
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-262AA
TO-263AB
JEDEC TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
(FLANGE)
SOURCE
DRAIN
75343G
75343P
75343S
75343S
DRAIN
BRAND
GATE
HUF75343G3, HUF75343P3, HUF75343S3,
Features
• 75A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensating PSPICE® and SABER™
- Thermal Impedance PSPICE™ and SABER Models
- TB334, “Guidelines for Soldering Surface Mount
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
(FLANGE)
DRAIN
(FLANGE)
DRAIN
March 2003
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1
JEDEC TO-220AB
JEDEC TO-262AA
G
D
S
HUF75343S3S
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE

Related parts for HUF75343G3

HUF75343G3 Summary of contents

Page 1

... TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND 75343G 75343P 75343S 75343S SOURCE DRAIN GATE DRAIN DRAIN (FLANGE) HUF75343S3S March 2003 JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 ...

Page 2

... V g(TOT 10V g(10 g(TH) GS (Figure 13 Figure 4 Figure 6 270 1.81 -55 to 175 300 260 MIN TYP 150 0.007 - - - - - - - - - 30V, - 170 DD 75A 0 1.0mA g(REF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 UNITS MAX UNITS - 250 A 100 0.009 o 0. C/W 125 205 nC 110 nC 7 ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 3000 - 1100 - 230 MIN TYP - - - - - - 100 125 CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 MAX UNITS - MAX UNITS 1.25 V 100 ns 200 nC 150 175 ...

Page 4

... AV AS DSS (L/R)ln[(I *R)/(1.3*RATED DSS STARTING T o STARTING T = 150 C J 0.01 0 TIME IN AVALANCHE (ms 15V DD -55 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev 150 + 175 C 6.0 7.5 ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 30V GATE CHARGE (nC 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 75A 47A 18A D 80 100 HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev 250 120 160 200 0V 1MHz ISS RSS OSS ...

Page 6

... Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 DRAIN 2 SOURCE 3 ...

Page 8

... EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 RDBREAK 51 72 RDBODY ISCL DBREAK 50 71 RDRAIN MWEAK 8 DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 DRAIN 2 SOURCE 3 ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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