FQB5N50CFTM Fairchild Semiconductor, FQB5N50CFTM Datasheet - Page 3

• Manufacturer Part Number: FQB5N50CFTM
• Description: MOSFET N-CH 500V 5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQB5N50CFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.55 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 96W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB5N50CFTMTR

FQB5N50CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
1200
1000
10
10
10
800
600
400
200
-1
1
0
10
0
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-1
-1
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
5
10
0
I
D
0
, Drain Current [A]
C
C
C
oss
iss
rss
V
GS
C
C
C
= 10V
10
iss
oss
rss
= C
= C
= C
10
Notes :
10
1. 250
2. T
gs
gd
1
ds
1
+ C
+ C
Note : T
C
= 25
µ
gd
gd
s Pulse Test
(C
°
V
Notes ;
C
ds
J
1. V
2. f = 1 MHz
GS
= 25
= shorted)
= 20V
GS
°
C
= 0 V
15
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Variation vs. Source Current
and Temperatue
25
°
C
0.4
150
150?
°
C
5
4
V
V
Q
GS
SD
V
G
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
DS
V
DS
V
= 400V
DS
= 250V
25?
= 100V
-55
°
0.8
10
C
6
1.0
Notes :
1. V
2. 250
Notes :
1. V
2. 250
DS
15
Note : I
8
µ
= 40V
s Pulse Test
GS
µ
= 0V
s Pulse Test
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1.2
D
= 5A
10
1.4
20