FQB5N50CFTM Fairchild Semiconductor, FQB5N50CFTM Datasheet - Page 4
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FQB5N50CFTM
Manufacturer Part Number
FQB5N50CFTM
Description
MOSFET N-CH 500V 5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet
1.FQB5N50CFTM.pdf
(8 pages)
Specifications of FQB5N50CFTM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
96W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB5N50CFTMTR
FQB5N50CF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
-1
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
vs. Temperature
-50
Operation in This Area
is Limited by R
T
J
V
, Junction Temperature [
DS
0
10
, Drain-SourceVoltage[V]
1
DS(on)
50
10
10
10
* Notes :
1. T
2. T
3. Single Pulse
-1
-2
0
10
DC
-5
C
J
100
= 150
= 25
0.02
0.01
D=0.5
0.05
0.1
100ms
0.2
°
C]
o
C
10
o
C
Notes :
1. V
2. I
10ms
2
D
10
GS
= 250
150
= 0 V
single pulse
1ms
-4
µ
t
A
1
, Square Wave Pulse Duration [sec]
100
µ
10
s
200
10
µ
-3
(Continued)
s
10
3
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
6
5
4
3
2
1
0
25
* Notes :
1. Z
2. Duty Factor, D=t
3. T
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-100
θ
JM
JC
P
(t) = 1.3
- T
vs. Temperature
DM
C
vs. Case Temperature
50
= P
DM
0
C/W Max.
t
10
1
* Z
-50
t
2
1
0
/t
θ
JC
2
(t)
T
C
75
, Case Temperature [
T
J
, Junction Temperature [
0
10
1
100
50
125
100
o
C]
°
C]
Notes :
1. V
2. I
www.fairchildsemi.com
150
150
D
GS
= 2.5 A
= 10 V
200
175