FDB8441_F085 Fairchild Semiconductor, FDB8441_F085 Datasheet
FDB8441_F085
Specifications of FDB8441_F085
Related parts for FDB8441_F085
FDB8441_F085 Summary of contents
Page 1
... GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDB8441 Rev.A ® MOSFET Applications Automotive Engine Control = 80A D Powertrain Management Solenoid and Motor Drivers Electronic Steering ...
Page 2
MOSFET Maximum Ratings Symbol V Drain to Source Voltage DS V Gate to Source Voltage GS Drain Current Continuous (T I Continuous ( amb Pulsed E Single Pulse Avalanche Energy AS Power dissipation Derate ...
Page 3
... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDB8441 Rev 25° ...
Page 4
Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 100 T , CASE TEMPERATURE C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.20 0.10 0.05 ...
Page 5
Typical Characteristics 4000 1000 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED J LIMITED (on 0 DRAIN ...
Page 6
Typical Characteristics 1.2 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40000 10000 1000 f = 1MHz 100 0 ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...