FDMB506P Fairchild Semiconductor, FDMB506P Datasheet - Page 4
FDMB506P
Manufacturer Part Number
FDMB506P
Description
MOSFET P-CH 20V 6.8A 8MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMB506P.pdf
(6 pages)
Specifications of FDMB506P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
2960pF @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
8-MLP, MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Characteristics
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
50
40
30
20
10
1
50
40
30
20
10
0
Figure 3. On-Resistance Variation with
-50
0
Figure 1. On-Region Characteristics.
0
0.5
Figure 5. Transfer Characteristics.
V
V
V
GS
-3.5V
I
D
GS
DS
=-4.5V
= -6.8A
-25
= -4.5V
= -5V
1
1
-V
-V
T
DS
0
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
-3.0V
25
1.5
2
50
-2.5V
T
A
= -55
2
3
75
o
C
-2.0V
-1.8V
o
100
C)
2.5
125
4
o
125
C
25
o
C
150
3
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
100
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
2
1
0
0
1
V
Drain Current and Gate Voltage.
V
GS
GS
T
=0V
A
=-1.8V
= 25
1.5
0.2
Gate-to-Source Voltage.
-V
-2.0V
o
T
C
10
SD
A
-V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
0.4
, GATE TO SOURCE VOLTAGE (V)
T
-2.5V
o
-I
A
C
D
25
= 125
, DRAIN CURRENT (A)
2.5
o
C
20
0.6
o
C
-55
-3.0V
3
o
C
0.8
30
3.5
-3.5V
1
4
FDMB506P Rev C2(W)
40
I
D
= -3.4A
1.2
4.5
-4.5V
50
5
1.4