FDMB506P Fairchild Semiconductor, FDMB506P Datasheet - Page 5

• Manufacturer Part Number: FDMB506P
• Description: MOSFET P-CH 20V 6.8A 8MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB506P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2960pF @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
1
5
4
3
2
1
0
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.001
R
0.01
SINGLE PULSE
I
R
D
0.1
DS(ON)
θ JA
V
= -6.8A
0.0001
T
1
GS
A
= 160
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C
5
C/W
0.2
0.1
0.05
-V
0.02
DS
0.01
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
Q
1
DC
g
, GATE CHARGE (nC)
10s
0.001
10
1s
100ms
10ms
Figure 9. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1ms
15
V
100 µ s
DS
10
= -5V
0.01
20
-15V
-10V
100
0.1
25
t
1
, TIME (sec)
3200
2800
2400
2000
1600
1200
800
400
10
8
6
4
2
0
0
0.01
Figure 8. Capacitance Characteristics.
0
1
C
Figure 10. Single Pulse Maximum
RSS
C
OSS
0.1
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
C
ISS
1
t
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
10
(t) = r(t) * R
100
A
t
= 160
1
= P * R
t
2
o
SINGLE PULSE
R
C/W
15
θ JA
θJA
FDMB506P Rev C2(W)
T
100
θJA
1
A
= 160°C/W
(t)
/ t
= 25°C
f = 1 MHz
V
2
GS
= 0 V
1000
1000
20