FQP6N50C Fairchild Semiconductor, FQP6N50C Datasheet - Page 4

• Manufacturer Part Number: FQP6N50C
• Description: MOSFET N-CH 500V 5.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 98W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
Figure 9. Maximum Safe Operating Area
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
1.2
1.1
1.0
0.9
0.8
-100
0
Operation in This Area
is Limited by R
-50
vs Temperature
V
10
T
DS
J
1
DS(on)
, Junction Temperature [
, Drain-Source Voltage [V]
※
0
1. T
2. T
3. Single Pulse
Notes :
C
J
1 0
1 0
1 0
= 150
= 25
-1
-2
0
1 0
o
C
o
C
-5
DC
50
D = 0 .5
0 .0 1
0 .0 5
0 .0 2
0 .2
0 .1
100 ms
Figure 11. Transient Thermal Response Curve
10 ms
10
2
s in g le p u ls e
(Continued)
100
1 ms
1 0
o
100 s
C]
-4
※
1. V
2. I
Notes :
t
D
GS
1
= 250 µA
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
= 0 V
150
1 0
10
3
-3
200
1 0
-2
5
4
3
2
1
0
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※
1 0
Figure 10. Maximum Drain Current
Figure 8. On-Resistance Variation
1 . Z
2 . D uty Fa c to r, D = t
3 . T
N o te s :
-1
P
θ JC
JM
DM
- T
(t) = 2 .05
50
C
-50
= P
vs Case Temperature
D M
t
1 0
1
T
vs Temperature
℃
* Z
t
C
2
T
0
, Case Temperature [ ]
/W M a x .
1
/t
θ JC
J
, Junction Temperature [
2
0
75
(t)
1 0
50
1
100
℃
100
o
C]
125
※
1. V
2. I
Notes :
150
D
GS
= 2.25 A
= 10 V
Rev. B1, October 2008
150
200