FDC5614P_D87Z Fairchild Semiconductor, FDC5614P_D87Z Datasheet
FDC5614P_D87Z
Manufacturer Part Number
FDC5614P_D87Z
Description
MOSFET P-CH 60V 3A 6SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC5614P_D87Z.pdf
(5 pages)
Specifications of FDC5614P_D87Z
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
759pF @ 30V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDC5614P
60V P-Channel Logic Level PowerTrench
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
.564
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC5614P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• –3 A, –60 V.
• Fast switching speed
• High performance trench technology for extremely
MOSFET
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–60
±20
–20
1.6
0.8
–3
78
30
= 0.105 Ω @ V
= 0.135 Ω @ V
February 2002
6
5
4
FDC5614P Rev C1 (W)
3000 units
GS
GS
Quantity
= –10 V
= –4.5 V
Units
°C/W
°C/W
°C
W
V
V
A
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FDC5614P_D87Z Summary of contents
Page 1
... Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device .564 FDC5614P 2002 Fairchild Semiconductor Corporation MOSFET Features • –3 A, –60 V. • Fast switching speed • High performance trench technology for extremely low R DS(ON) ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -10V -4.5V GS -6.0V -4.0V 12 -5.0V -3. -3. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -3. ...
Page 4
Typical Characteristics -3. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT 10 DS(ON -10V GS SINGLE PULSE ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...