FDC5614P_D87Z Fairchild Semiconductor, FDC5614P_D87Z Datasheet - Page 3

• Manufacturer Part Number: FDC5614P_D87Z
• Description: MOSFET P-CH 60V 3A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC5614P_D87Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 759pF @ 30V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
15
12
15
12
9
6
3
0
9
6
3
0
Figure 3. On-Resistance Variation with
1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
V
DS
GS
V
-6.0V
-5.0V
I
= -5V
= -10V
D
GS
= -3.0A
-25
= -10V
1
-V
-V
2
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
-4.5V
-4.0V
25
2
-3.5V
T
3
A
50
= -55
o
3
C
-3.0V
75
125
100
o
4
C)
o
C
4
25
-2.5V
o
C
125
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.4
0.3
0.2
0.1
0.001
0.01
0
100
0.1
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
1
0
0
V
Drain Current and Gate Voltage.
GS
T
A
= 0V
= 25
0.2
V
Gate-to-Source Voltage.
-V
GS
o
C
-V
SD
= -3.5V
2
4
, BODY DIODE FORWARD VOLTAGE (V)
GS
, GATE TO SOURCE VOLTAGE (V)
T
0.4
A
-4.0V
= 125
T
-I
A
D
, DRAIN CURRENT (A)
= 125
o
4
C
0.6
o
-4.5V
C
6
25
-5.0V
o
0.8
C
6
-6.0V
-55
o
C
1
-7.0V
8
FDC5614P Rev C1 (W)
8
-8.0V
I
D
1.2
= -1.5A
-10V
1.4
10
10