IRFR224BTM_TC002 Fairchild Semiconductor, IRFR224BTM_TC002 Datasheet - Page 95
IRFR224BTM_TC002
Manufacturer Part Number
IRFR224BTM_TC002
Description
MOSFET N-CH 250V 3.8A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of IRFR224BTM_TC002
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 95 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Bipolar Power Transistors – Switching Transistors
TO-126 NPN Configuration
KSC2752
FJE3303
KSE13003
FJE5304D
KSE5020
KSC5026M
TO-126 PNP Configuration
KSA1156
TO-220 NPN Configuration
FJP3835
KSC2333
FJP5304D
KSE13005
FJP3305
KSC2518
BUT11
KSC5039
KSC2335
BUT12
FJP13007
FJP13009
FJP5355
BUT11A
BUT12A
KSC5020
FJP5021
KSC5321
FJP5321
FJP5027
KSC5027
TO-220F NPN Configuration
FJPF3835
Products
V
CEO
400
400
400
400
500
800
400
120
400
400
400
400
400
400
400
400
400
400
400
440
450
450
500
500
500
500
800
800
120
(V) V
CBO
1100
1000
1000
1100
1100
500
700
700
700
800
400
200
500
700
700
700
500
850
800
500
850
700
700
900
800
800
800
800
200
(V) V
EBO
12
12
12
–
–
7
9
9
7
7
7
8
7
9
9
7
9
7
7
9
9
9
7
7
7
7
7
7
8
(V) I
C
0.5
1.5
1.5
1.5
0.5
12
4
3
8
2
4
4
4
4
5
5
7
8
8
5
5
8
3
5
5
5
3
3
8
(A)
P
C
100
100
100
100
100
100
100
10
20
20
30
30
20
10
50
15
70
75
75
40
70
40
80
50
40
50
50
50
30
(W)
Min
120
120
20
15
10
30
20
10
19
20
10
20
15
15
15
15
15
10
10
–
–
–
–
8
8
8
8
8
8
Max
200
250
250
80
21
40
40
50
40
80
40
60
35
80
80
60
40
50
50
40
40
40
40
–
–
–
–
–
–
2-90
Discrete Power Products –
@I
h
FE
0.05
0.01
0.5
0.5
0.3
0.1
0.1
0.1
0.3
0.3
0.3
0.6
0.6
0.6
0.2
0.2
C
–
–
–
–
2
3
2
1
1
1
2
5
3
(A) @V
CE
5
2
2
5
5
5
5
4
5
5
5
5
5
–
5
5
–
5
5
2
–
–
5
5
5
5
5
5
4
(V)
Bold = New Products (introduced January 2003 or later)
Typ (V) Max (V) @I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.5
0.7
0.5
0.7
0.5
0.5
1.5
1.5
1.5
0.2
1.5
1.5
0.5
1
1
2
1
1
1
1
1
1
1
1
1
1
2
2
V
Bipolar Transistors and JFETs
CE
(sat)
0.75
0.3
0.5
0.5
0.5
1.5
0.1
0.5
0.5
1.5
2.5
0.8
2.5
1.5
1.5
1.5
C
3
1
1
3
3
6
2
5
6
3
3
3
3
(A) @I
0.06
0.15
0.01
0.1
0.1
0.1
0.3
0.3
0.1
0.1
0.2
0.2
0.3
0.6
0.5
0.6
1.2
0.4
0.2
0.5
1.2
0.3
0.6
0.6
0.6
0.3
0.3
0.3
B
1
(A)
t
STG
6.68
6.68
2.5
2.5
0.6
0.9
2.5
2.5
1.2
6.5
–
4
4
3
3
4
4
4
3
4
3
3
4
4
3
3
3
3
3
(µs) t
F
0.68
0.68
0.7
0.7
0.3
0.3
0.1
0.9
0.7
0.8
0.8
0.8
0.7
0.7
0.4
0.8
0.8
0.3
0.3
0.3
0.3
0.3
0.3
(µs)
1
–
1
1
4
1
Related parts for IRFR224BTM_TC002
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET N-CH 250V 3.8A DPAK
Manufacturer:
Vishay
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: