SFP9Z24 Fairchild Semiconductor, SFP9Z24 Datasheet - Page 2

• Manufacturer Part Number: SFP9Z24
• Description: MOSFET P-CH 60V 9.7A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SFP9Z24

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 49W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFP9Z24
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
O
O
O
O
O
4
5
1
2
R
3
BV
BV/ T
V
Notes ;
C
t
t
V
I
I
C
C
GS(th)
Q
Q
I
Q
DS(on)
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2.0mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
d(on)
d(off)
Q
GSS
DSS
g
I
SM
t
SD
t
SD
t
S
rr
oss
DSS
iss
rss
fs
gd
r
f
gs
rr
g
_ <
-9.7A, di/dt
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-9.7A, V
_ <
250A/ s, V
Characteristic
Characteristic
DD
=-25V, R
DD
_ <
G
=27
BV
(T
DSS
*
C
, Starting T
, Starting T
=25
_ <
O
O
4
1
o
C unless otherwise specified)
2%
Min.
Min.
-2.0
-60
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
J
=25
=25
-0.04
o
Typ.
Typ.
0.22
o
465
140
C
2.9
6.0
4.1
C
40
11
21
29
20
15
80
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
-100
0.28
-4.0
100
600
215
-9.7
-3.8
-10
-40
60
30
50
65
50
19
--
--
--
--
--
--
--
V/
nA
nC
pF
ns
ns
V
V
S
A
V
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=-250 A
G
=-9.7A
F
=25
=25
/dt=100A/ s
=18
=-5V,I
=-60V
=-48V,T
=-30V,I
=-48V,V
=0V,I
=-20V
=20V
=-10V,I
=0V,V
=-30V,I
See Fig 13
Test Condition
Test Condition
o
o
C,I
C,I
See Fig 5
POWER MOSFET
D
D
S
F
DS
=-250 A
=-9.7A
=-250 A
=-9.7A,V
D
D
D
P-CHANNEL
C
GS
=-25V,f =1MHz
=-4.9A
=-4.9A
=-9.7A,
=150
=-10V,
See Fig 7
o
C
GS
O
O
=0V
4
4
O
O
O
O
O
5
5
4
4
4