SFP9Z24 Fairchild Semiconductor, SFP9Z24 Datasheet - Page 4

• Manufacturer Part Number: SFP9Z24
• Description: MOSFET P-CH 60V 9.7A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SFP9Z24

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 49W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFP9Z24
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
@ N o t e s :
1 . T
2 . T
3 . S i n g l e P u l s e
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
Fig 9. Max. Safe Operating Area
- 2 5
C
J
-V
T
= 2 5
= 1 7 5
J
DS
, Junction Temperature [
0
o
, Drain-Source Voltage [V]
C
o
C
10
10
- 1
2 5
DS(on)
0
10
- 5
0.02
0.01
0.05
D=0.5
5 0
0.2
0.1
1 0
1
7 5
D C
1 0 0
10
1 0 m s
t
1
- 4
single pulse
@ N o t e s :
1 m s
, Square Wave Pulse Duration
1 2 5
1 . V
2 . I
o
C]
0 . 1 m s
GS
D
= - 2 5 0 A
1 5 0
= 0 V
Fig 11. Thermal Response
10
1 7 5
- 3
2 0 0
1 0
2
10
- 2
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
1 2
1 0
Fig 10. Max. Drain Current vs. Case Temperature
8
6
4
2
0
- 7 5
2 5
@ Notes :
P
- 5 0
.
10
DM
Fig 8. On-Resistance vs. Temperature
1. Z
2. Duty Factor, D=t
3. T
- 1
5 0
- 2 5
J M
J C
T
-T
J
(t)=3.06
t
T
1.
C
, Junction Temperature [
0
c
t
[sec]
=P
2.
, Case Temperature [
7 5
D M
10
2 5
*Z
0
o
J C
C/W Max.
5 0
(t)
1 0 0
1
/t
7 5
POWER MOSFET
2
10
P-CHANNEL
1 0 0
1
1 2 5
o
@ N o t e s :
1 2 5
C]
1 . V
2 . I
o
C]
GS
D
1 5 0
= - 4 . 9 A
1 5 0
= - 1 0 V
1 7 5
2 0 0
1 7 5