IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 5

• Manufacturer Part Number: IRF540,127
• Description: MOSFET N-CH 100V 23A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF540,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1187pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1160-5; 934055542127

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
30
28
26
24
22
20
18
16
14
12
10
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-60
Fig.8. Typical transconductance, T
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
2
-40
1
4
-20
2
6
R
Junction temperature, Tj (C)
0
8
DS(ON)
Gate-source voltage, VGS (V)
3
20
10 12 14 16 18 20 22 24 26 28 30
175 C
Drain current, ID (A)
/R
I
D
g
4
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
5
GS
Tj = 25 C
D
)
80
)
6
= f(T
100 120 140 160 180
transistor
7
j
)
Tj = 25 C
j
8
= 25 ˚C .
175 C
9
10
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
4.5
3.5
2.5
1.5
0.5
10000
4
3
2
1
0
1000
V
-60 -40 -20
100
Fig.12. Typical capacitances, C
10
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0.1
= f(V
0
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Fig.10. Gate threshold voltage.
= f(T
0.5
GS)
DS
); conditions: V
; conditions: T
j
); conditions: I
0
1
Gate-source voltage, VGS (V)
minimum
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
20
1.5
1
40
2
typical
60
minimum
2.5
j
IRF540, IRF540S
typical
GS
D
= 25 ˚C; V
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
Product specification
100 120 140 160 180
10
3.5
iss
, C
maximum
DS
DS
4
oss
= V
, C
= V
Coss
Crss
Rev 1.100
Ciss
4.5
GS
rss
GS
100
.
5